january 2014 fdbl86210_f085 n-channel power trench ? mosfet ?2013 fairchild semiconductor corporation fdbl86210_f085 rev. c1 www.fairchildsemi.com 1 fdbl86210_f085 n-channel power trench ? mosfet 150v, 169a, 6.3 m features ? typ r ds(on) = 5m at v gs = 10v, i d = 80a ? typ q g(tot) = 70nc at v gs = 10v, i d = 80a ? uis capability ? rohs compliant ? qualified to aec q101 applications ? automotive engine control ? powertrain management ? solenoid and motor drivers ? integrated starter/alternator ? primary switch for 12v systems mosfet maximum ratings t j = 25c unless otherwise noted symbol parameter ratings units v dss drain to source voltage 150 v v gs gate to source voltage 20 v i d drain current - continuous (v gs =10) (note 1) t c = 25c 169 a pulsed drain current t c = 25c see figure4 e as single pulse avalanche energy (note 2) 502 mj p d power dissipation 500 w derate above 25 o c3.3w/ o c t j , t stg operating and storage temperature -55 to + 175 o c r jc thermal resistance junction to case 0.3 o c/w r ja maximum thermal resistance junction to ambient (note 3) 43 o c/w package marking and ordering information device marking device package reel size tape width quantity fdbl86210 fdbl86210_f085 mo-299a - - - notes: 1: current is limited by junction temperature. 2: starting t j = 25c, l = 0.24mh, i as = 64a, v dd = 100v during inductor charging and v dd = 0v during time in avalanche 3: r ja is the sum of the junction-to-case and case-to-ambient thermal re sistance where the case thermal reference is defined as the s older mounting surface of the drain pins. r jc is guaranteed by design while r ja is determined by the user's board design. the maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. for ? current ? package ? drawing, ? please ? refer ? to ? the ? fairchild ? website ? at ? www.fairchildsemi.com/packaging s d g
fdbl86210_f085 n-channel power trench ? mosfet fdbl86210_f085 rev. c1 www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted off characteristics on characteristics dynamic characteristics symbol parameter test conditions min typ max units b vdss drain to source breakdown voltage i d = 250 a, v gs = 0v 150 - - v i dss drain to source leakage current v ds = 150v, t j = 25 o c --1 a v gs = 0v t j = 175 o c(note 4) - - 1 ma i gss gate to source leakage current v gs = 20v - - 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 2.0 2.8 4.0 v r ds(on) drain to source on resistance i d = 80a, v gs = 10v t j = 25 o c -56.3m t j = 175 o c(note 4) - 14 17.5 m c iss input capacitance v ds = 75v, v gs = 0v, f = 1mhz - 5805 - pf c oss output capacitance - 536 - pf c rss reverse transfer capacitance - 16 - pf r g gate resistance f = 1mhz - 2.2 - q g(tot) total gate charge at 10v v gs = 0 to 10v v dd = 75v i d = 80a -7090nc q g(th) threshold gate charge v gs = 0 to 2v - 10.5 13 nc q gs gate to source gate charge - 32.5 - nc q gd gate to drain ?miller? charge - 10 - nc switching characteristics drain-source diode characteristics notes: 4: the maximum value is specified by design at t j = 175c. product is not tested to this condition in production. t on turn-on time v dd = 75v, i d = 80a, v gs = 10v, r gen = 6 - - 80 ns t d(on) turn-on delay time - 39 - ns t r rise time - 30 - ns t d(off) turn-off delay time - 70 - ns t f fall time - 23 - ns t off turn-off time - - 130 ns v sd source to drain diode voltage i sd =80a, v gs = 0v - - 1.25 v i sd = 40a, v gs = 0v - - 1.2 v t rr reverse recovery time i f = 80a, di sd /dt = 100a/ s, v dd =120v - 108 125 ns q rr reverse recovery charge - 323 467 nc
fdbl86210_f085 n-channel power trench ? mosfet fdbl86210_f085 rev. c1 www.fairchildsemi.com 3 typical characteristics figure 1. normalized po wer dissipation vs case temperature 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 power dissipation multiplier t c , case temperature( o c) figure 2. maximum continuous drain current vs case temperature 25 50 75 100 125 150 175 200 0 40 80 120 160 200 i d , drain current (a) t c , case temperature( o c) figure 3. 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 single pulse d = 0.50 0.20 0.10 0.05 0.02 0.01 normalized thermal impedance, z t jc t, rectangular pulse duration(s) duty cycle - descending order 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t c p dm t 1 t 2 normalized maximum transient thermal impedance figure 4. peak current capability 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 100 1000 10000 v gs = 10v single pulse i dm , peak current (a) t, rectangular pulse duration(s) t c = 25 o c i = i 2 175 - t c 150 for temperatures above 25 o c derate peak current as follows:
fdbl86210_f085 n-channel power trench ? mosfet fdbl86210_f085 rev. c1 www.fairchildsemi.com 4 figure 5. 11 01 0 0 0.1 1 10 100 1000 100us 1ms 10ms i d , drain current (a) v ds , drain to source voltage (v) operation in this area may be limited by r ds(on) single pulse t j = max rated t c = 25 o c 100ms forward bias safe operating area 0.001 0.01 0.1 1 10 100 1000 10000 1 10 100 1000 starting t j = 150 o c starting t j = 25 o c i as , avalanche current (a) t av , time in avalanche (ms) t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r z 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] note: refer to fairchild application notes an7514 and an7515 figure 6. unclamped inductive switching c apability figure 7. 2345678 0 40 80 120 160 200 t j = -55 o c t j = 25 o c t j = 175 o c pulse duration = 80 p s duty cycle = 0.5% max v dd = 5v i d , drain current (a) v gs , gate to source voltage (v) transfer characteristics figure 8. 0.00.20.40.60.81.01.2 0.1 1 10 100 400 t j = 25 o c t j = 175 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) forward diode characteristics figure 9. 012345 0 50 100 150 200 250 300 5v v gs 15v top 10v 8v 7v 6v 5.5v 5v bottom 80 p s pulse width tj=25 o c i d , drain current (a) v ds , drain to source voltage (v) saturation characteristics figure 10. 012345 0 50 100 150 200 250 300 5v i d , drain current (a) v ds , drain to source voltage (v) v gs 15v top 10v 8v 7v 6v 5.5v 5v bottom 80 p s pulse width tj=175 o c saturation characteristics typical characteristics
fdbl86210_f085 n-channel power trench ? mosfet fdbl86210_f085 rev. c1 www.fairchildsemi.com 5 figure 11. 24681 0 0 10 20 30 40 50 i d = 80a pulse duration = 80 p s duty cycle = 0.5% max r ds(on) , drain to source on-resistance ( m : ) v gs , gate to source voltage (v) t j = 25 o c t j = 175 o c rdson vs gate voltage figure 12. normalized rdson vs junction te mperature -80 -40 0 40 80 120 160 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 pulse duration = 80 p s duty cycle = 0.5% max i d = 80a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) figure 13. -80 -40 0 40 80 120 160 200 0.0 0.3 0.6 0.9 1.2 1.5 v gs = v ds i d = 250 p a normalized gate threshold voltage t j , junction temperature( o c) normalized gate threshold voltage vs temperature figure 14. -80 -40 0 40 80 120 160 200 0.90 0.95 1.00 1.05 1.10 i d = 1ma normalized drain to source breakdown voltage t j , junction temperature ( o c) normalized drain to source breakdown voltage vs junction temperature figure 15. 0.1 1 10 100 200 1 10 100 1000 10000 f = 1mhz v gs = 0v c rss c oss c iss capacitance (pf) v ds , drain to source voltage ( v ) capacitance vs drain to source voltage figure 16. 0 20406080 0 2 4 6 8 10 v dd = 75v v dd =60v i d = 80a v dd = 90v q g , gate charge(nc) v gs , gate to source voltage(v) gate charge vs gate to source voltage typical characteristics
fdbl86210_f085 rev. c1 www.fairchildsemi.com 6 fdbl86210_f085 n-channel power trench ? mosfet trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions , specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform w hen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably ex pected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? ax-cap ? * bitsic? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? fps? f-pfs? frfet ? global power resource sm greenbridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? mwsaver ? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* tinyboost ? tinybuck ? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic? trifault detect? truecurrent ? * serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? ? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing dela ys. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above . products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping th is practice by buying direct or from authorized distributors. rev. i66 tm ?
|
